Flash Memory Storage Principle Uncovered
Related Paper Published in World-Renowned Academic Journal
Samsung Electronics has succeeded in uncovering the fundamental principle related to flash memory storage, which has long been a technical challenge. The company expects this achievement to overcome the miniaturization limits of flash memory and accelerate advancements in core technologies such as artificial intelligence (AI).
Samsung Electronics announced on the 14th that its Innovation Center CSE (Computational Science and Engineering) team published a paper on the principle of flash memory storage in the world-class academic journal Advanced Materials.
Researchers from Samsung Electronics Innovation Center CSE Team and SAIT (formerly Comprehensive Technology Institute) who participated in the paper. From the left, SAIT Master Seung-Yeol Yang and Young-Taek Oh, Innovation Center CSE Team Executive Director Dae-Shin Kim, Woon-Yi Choi, Team Leader Won-Jun Son, and Distinguished Engineer Ui-Hee Kwon / The Innovation Center CSE team is a department that uses high-performance computers such as supercomputers to simulate the electrical characteristics of various devices including semiconductors and memory, as well as various properties of materials.
This time, they revealed the fundamental principle by which electrons are stably stored in amorphous silicon nitride, which plays a key role in flash memory information storage, and their excellence was recognized with the publication of a related paper in the materials engineering academic journal Advanced Materials.
Flash memory is a memory semiconductor that preserves data even when power is cut off. Samsung Electronics has continuously pursued research and development to achieve innovation in flash memory technology. However, it had been difficult to clearly identify the fundamental storage principle of flash memory at the atomic level.
Samsung Electronics stated, "The principle of flash memory storage is to stably trap electrons in amorphous silicon nitride, and until this research, specific details related to the storage principle had not been revealed, representing a technical debt. The significance of this research lies in uncovering the operating principle at the atomic level that had been overlooked."
They added, "V-NAND (a type of flash memory called NAND flash) has required advanced miniaturization through successive generations," and "fundamentally understanding phenomena occurring at the atomic level is an essential process for future memory development innovation."
Samsung Electronics explained that as V-NAND evolves, it will be possible to store data at a lower cost. They also noted that as digital data becomes more abundant, AI will have more data to learn from, ultimately forecasting that NAND technology innovation will be a driving factor accelerating progress in core technologies such as AI.
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