[Exclusive] Samsung Electronics Accelerates Development of 6th Generation DRAM... Aiming for a 'Quantum Jump'

Goal to succeed in 1c development by June
If successful, the 'super gap' with competitors is expected to widen further

[Image source=Yonhap News]

[Asia Economy Reporter Jin-ho Kim] It has been confirmed that Samsung Electronics has set a goal to successfully complete the development of 1c (6th generation, 11~12nm class) DRAM, an early 10nm-class DRAM, by June. This is interpreted as a determination to not only completely erase concerns about the technological capability of 1b (5th generation, 12~13nm class) development but also to reaffirm Samsung's 'super-gap' strategy to the world through a so-called 'quantum jump (great leap)'.

According to Asia Economy's investigation on the 14th, the Semiconductor Research Institute in charge of semiconductor development at Samsung Electronics has established an internal guideline that the research and development (R&D) of 1c must be successful.

Previously, Samsung Electronics had announced to employees involved in semiconductor research about the 'skip-drop (abandonment)' of 1b development. A source familiar with internal affairs said, "Usually, semiconductor development for multiple generations is conducted simultaneously," and added, "With the cancellation of 1b development, the plan to secure 1c unconditionally is being pushed forward."

Samsung Electronics' prompt acceleration of 1c development following the decision to abandon 1b aims to widen the gap with latecomers such as SK Hynix and Micron. It is interpreted as a will to continue Samsung's 'super-gap' strategy, which has dominated the market for 30 years with overwhelming technology and low costs, leading competitors by as much as five years or as little as one to two years.

In fact, Samsung Electronics has a precedent of skipping 28nm DRAM mass production and jumping directly to 25nm. Although many analyze that it is not easy at the much more refined 10nm class, Samsung's simultaneous development of multiple generations such as 1b and 1c, and the setting of the development deadline to June, suggest a high possibility of realization.

Samsung Electronics' expectation for the success of 1c is inevitably high, as it lost the 'first' title during the mass production process of 1a (4th generation, 10nm class) DRAM. At that time, American companies Micron and SK Hynix succeeded in mass production earlier, which was seen as a blow to Samsung's pride. However, Samsung succeeded in mass-producing thinner 1a DRAM than the two competitors.

Meanwhile, the key to DRAM is narrowing the circuit linewidth (the width of the transistor gate). The narrower the linewidth, the higher the DRAM output per wafer. Generally, 1a DRAM of the 4th generation shows 25% higher production volume compared to the 3rd generation (1z). Product performance and power consumption are also improved simultaneously.

An industry insider said, "If Samsung Electronics succeeds in developing 1c, it will gain high profits in terms of productivity and cost competitiveness," adding, "Since 1b development was abandoned midway, it is expected that all personnel and resources will be fully投入 to ensure the success of 1c development."