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Former Samsung Electronics and Hynix Semiconductor Executives Arrested for Technology Leakage

Violation of the Act on the Prevention of Unfair Competition and Protection of Trade Secrets

Former executives from Samsung Electronics and Hynix Semiconductor have been arrested on charges of leaking semiconductor technology.

Former Samsung Electronics and Hynix Semiconductor Executives Arrested for Technology Leakage


On the 6th, the Seoul Metropolitan Police Agency's Industrial Technology Security Investigation Unit announced that former Samsung Electronics and Hynix Semiconductor executive Choi (66) and former Samsung Electronics senior researcher Oh (60) were arrested the previous day on charges of violating the Act on the Prevention of Unfair Competition and Protection of Trade Secrets.


They are accused of leaking Samsung Electronics' technology related to the 20㎚ (1㎚ = one billionth of a meter) class semiconductor production process to China.


Previously, Choi was arrested in June last year on charges of stealing design plans of Samsung Electronics' semiconductor factory and establishing a Samsung Electronics replica factory producing 20㎚ class DRAM semiconductors, but was later released.


The police are investigating on the premise that they handed over the technology in its entirety.


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