Major NAND Flash Industry Event to Be Held in Santa Clara, USA from July 6-8
AI Memory Products and Technologies Expected to Be Showcased
Samsung Electronics and SK Hynix will participate in the major NAND flash industry event, the 'Flash Memory Summit (FMS) 2024.'
According to the industry on the 24th, Samsung Electronics and SK Hynix will deliver keynote speeches and showcase their latest products at FMS 2024, held from July 6 to 8 (local time) in Santa Clara, California, USA.
During the keynote, Samsung Electronics' Jim Elliott, Vice President and Head of North America, Oh Hwa-seok, Vice President of the Solution Product Engineering Team, and Song Taek-sang, Executive Director of the Memory Business Division's DRAM Solution Team, will take the stage with the theme "AI Revolution: New Demand Growth for Memory and Storage." SK Hynix will also be represented by Vice Presidents Kwon Eon-o and Kim Cheon-seong, who are in charge of HBM and SSD development.
Celebrating its 18th anniversary this year, FMS is an annual event where flash memory semiconductor companies, startups, and industry stakeholders gather to share new technologies, products, and market trends. This year, major global memory companies such as Japan's Kioxia, the United States' Western Digital, and Micron will also participate in large numbers.
Under the theme "the Future of Memory and Storage," the event will feature a wide range of large-capacity and high-performance products related to DRAM, NAND, automotive, data centers, and artificial intelligence (AI). Especially since FMS is a NAND-focused event, new NAND products and technologies related to NAND are also expected to be announced.
Previously, Samsung Electronics unveiled the PCIe 5.0 data center solid-state drive (SSD) "PM9D3a" for the first time at last year's event. SK Hynix attracted attention by showcasing the industry's first 300-layer NAND product, the "321-layer 1Tb (terabit) TLC (Triple-Level Cell) 4D NAND" sample.
As AI rapidly grows, the importance of not only NAND but also DRAM has increased, so companies will focus on introducing the latest high-bandwidth memory (HBM) DRAM products and Compute Express Link (CXL) technology at this event. Samsung Electronics will showcase memory products based on CXL technology, including CMM-D (CXL Memory Module-DRAM), CMM-B (Box), CMM-H (Hybrid), as well as HBM3E and DDR5. CXL is a technology that expands bandwidth to easily increase processing capacity. SK Hynix plans to exhibit a diverse product portfolio including the 321-layer NAND product, HBM3E, and CXL.
Additionally, Samsung Electronics and SK Hynix will share insights on the AI memory market through their keynote speeches and introduce cutting-edge storage solutions across AI applications.
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