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Samsung Electronics Unveils Next-Generation Memory Including 'Shinebolt' for the AI Era in Silicon Valley

Samsung Memory Tech Day 2023 Held in Silicon Valley, USA
Unveiling 'Next-Generation Memory Solutions' to Lead the Era of Massive AI

On the 20th (local time), Samsung Electronics held the 'Samsung Memory Tech Day 2023' at the McEnery Convention Center in Silicon Valley, USA, under the theme of 'Redefining the Role of Memory,' unveiling next-generation memory solutions to lead the era of ultra-large-scale artificial intelligence (AI).

Samsung Electronics Unveils Next-Generation Memory Including 'Shinebolt' for the AI Era in Silicon Valley On the 20th (local time), Samsung Electronics held the 'Samsung Memory Tech Day 2023' at the McEnery Convention Center in Silicon Valley, USA, unveiling a large number of next-generation memory solutions that will lead the era of massive AI. The photo shows the Samsung Electronics HBM3E DRAM revealed that day. Provided by Samsung Electronics. [Image source=Yonhap News] Photo by Samsung Electronics

Samsung Electronics announced that it is working to improve DRAM integration density in the AI era. Having started mass production of 12nm-class DRAM in May, Samsung is developing next-generation 11nm-class DRAM aiming for the industry's highest level of integration density. The company is currently preparing to introduce a 3D new structure in DRAM below 10nm, planning to expand capacity to over 100Gb (gigabits) on a single chip through this innovation.


Samsung is also developing the highest number of layers in 9th-generation V-NAND and has successfully secured operational chips for mass production early next year. By reducing the cell's planar area and height to decrease volume and utilizing core technology to increase the number of layers, Samsung plans to prepare for the era of 1000-layer V-NAND.


Samsung unveiled the next-generation HBM3E DRAM, 'Shinebolt,' for the first time. Since commercializing HBM2 for high-performance computing (HPC) in 2016, Samsung has pioneered the HBM era and focused on developing next-generation DRAM.


'Shinebolt' offers high performance of up to 9.8Gbps per data input/output pin. This speed can process over 1.2TB of data per second (equivalent to processing 40 UHD movies of 30GB capacity in just one second). By optimizing NCF (Non-Conductive Film) technology, the chips are tightly stacked without gaps to achieve high-layer stacking, and thermal conductivity is maximized to improve thermal characteristics. Samsung stated that it is currently delivering HBM3E samples of the next-generation product to customers.


Samsung Electronics Unveils Next-Generation Memory Including 'Shinebolt' for the AI Era in Silicon Valley Lee Jung-bae, President of Samsung Electronics Memory Business Division, is giving a presentation at the 'Samsung Memory Tech Day 2023' held on the 20th (local time) at the McEnery Convention Center in Silicon Valley, USA. Provided by Samsung Electronics. Photo by Yonhap News.

Samsung Electronics also introduced solutions supporting high performance, high capacity, low power consumption, and small form factors at the user device level. In particular, the industry's first 7.5Gbps LPDDR5X CAMM2, developed by Samsung, attracted attention as a product that will change the landscape of the next-generation PC and laptop DRAM market. Additionally, Samsung showcased the 'Detachable AutoSSD,' which enables storage virtualization by partitioning a single SSD for use by multiple SoCs. This product supports a continuous read speed of up to 6500MB/s and offers a capacity of 4TB. It is implemented in a detachable form factor, allowing easy SSD replacement and facilitating performance upgrades.


Lee Jung-bae, President of Samsung Electronics Memory Business, said, "The era of ultra-large-scale AI is a point where technological innovation and growth opportunities intersect, marking a time of greater leaps and challenges for the industry. We will continue to lead the memory market by providing expanded solutions that transcend limits." He added, "We will overcome the challenges faced in the ultra-large-scale AI era by introducing new structures and materials."



Samsung Electronics Unveils Next-Generation Memory Including 'Shinebolt' for the AI Era in Silicon Valley On the 20th (local time), Samsung Electronics held the 'Samsung Memory Tech Day 2023' at the McEnery Convention Center located in Silicon Valley, USA, unveiling a large number of next-generation memory solutions that will lead the era of massive AI. The photo shows the booth at the Samsung Memory Tech Day 2023 event. Provided by Samsung Electronics. Photo by Yonhap News.


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