[Special Stock] Sigetronics Localizes GaN Epiwafers, Entirely Imported... Next-Generation Semiconductor 'Game Changer'

GaN (Gallium Nitride) power semiconductor specialist CJ Electronics is showing strong performance. The news that they have established a domestic platform for GaN compound semiconductor epiwafer materials, which are attracting attention as next-generation power semiconductors, appears to be influencing their stock price. GaN compound semiconductors have the advantage of withstanding voltages 2 to 3 times higher than conventional silicon semiconductors and operating normally at high temperatures.

As of 2:22 PM on the 21st, CJ Electronics was trading at 23,300 KRW, up 18.82% (3,690 KRW) compared to the previous trading day.

The Korea Nano Technology Institute has developed a GaN epiwafer material with excellent power semiconductor characteristics among third-generation wide bandgap (WBG) semiconductors, producing it on 6-inch silicon wafers using metal-organic chemical vapor deposition (MOCVD). This platform for GaN on silicon (Si) epi materials, which had previously been entirely imported, is now provided to domestic industry, academia, and research institutions.

This platform represents the first result of manufacturing power FET (Field Effect Transistor) devices on a 6-inch substrate using domestically grown GaN on Si epi materials, with significant meaning in confirming enhancement-mode (E-mode) operation.

The institute provided 6-inch GaN on Si epi material substrates for power semiconductor manufacturing to CJ Electronics, a semiconductor device manufacturer jointly conducting the 'GaN power device' research project, achieving the first implementation of enhancement-mode (E-mode) power semiconductor devices that simplify the design of high-efficiency power conversion systems.

CJ Electronics possesses outstanding technology in the field of GaN power semiconductors, next-generation power semiconductor devices that operate stably under high voltage and high temperature and are resistant to external shocks compared to conventional silicon semiconductors. Recently, in collaboration with Professor Choi Cheol-jong’s semiconductor science and technology team at Jeonbuk National University, they succeeded in developing a new gallium oxide power semiconductor device, which is establishing itself as a new trend in the global semiconductor market but remains at the basic development stage domestically. This achievement brings great expectations as it approaches commercialization.