World's First Intel Data Center Validation Begins
Intel 'Xeon Scalable Platform' to Be Applied
"10nm-Class 5th Generation Processed HBM Coming"
SK Hynix announced on the 30th that it has completed the development of the most miniaturized existing DRAM, the 10-nanometer class 5th generation (1b) technology, and has provided server-grade Double Data Rate (DDR)5 DRAM using this technology to Intel, marking the world's first verification process.
SK Hynix is conducting verification through the 'Intel Data Center Memory Certification Program.' This program aims to officially certify the compatibility of memory products used in Intel's server platform (a computing system integrating hardware and software technologies), known as the 'Xeon Scalable Platform.'
Dimitrios Giakas, Vice President of Intel's Memory I/O Technology Division, stated, "SK Hynix 1b DDR5 will be utilized in Intel's next-generation Xeon Scalable Platform," adding, "To this end, it is undergoing the industry's first verification through the Intel Data Center Memory Certification Program."
The DDR5 DRAM product provided to Intel operates at a speed of 6.4 gigabits per second (Gbps), achieving the highest speed among DDR5 products currently available on the market. This data processing speed is 33% faster than the initial DDR5 DRAM prototype speed of 4.8 Gbps. By applying the High-K Metal Gate (HKMG) process, it consumes 20% less power than the 10-nanometer class 4th generation (1a) DDR5 DRAM.
HKMG is a process technology that uses materials with high dielectric constant (K) as the insulating layer inside DRAM transistors to prevent leakage current and improve capacitance. SK Hynix applied the HKMG process to launch the world's first mobile DRAM new product (LPDDR5X) in November last year. In January, the new mobile DRAM (LPDDR5T) also adopted the HKMG process.
SK Hynix 10nm-class 5th generation (1b) DDR5 64GB DRAM module for servers. It is based on the 1b 16Gb chip. / Photo by SK Hynix
SK Hynix stated that through this technology development, it can supply DRAM products with high performance and excellent power efficiency (a relative indicator calculated by the amount of data processed per unit power per second) to the market.
Kim Jong-hwan, Vice President in charge of DRAM development at SK Hynix, said, "In January, we applied the 10-nanometer class 4th generation (1a) DDR5 server DRAM to the 4th generation Intel Xeon Scalable Processor and received industry-first certification," adding, "We expect the verification of this 1b DDR5 product to be successfully completed as well."
He also explained, "With forecasts predicting an improvement in the memory market situation from the second half of this year, we will focus on improving performance in the second half based on industry-leading DRAM competitiveness such as 1b mass production," and "In the first half of next year, we plan to expand the leading-edge 1b process to LPDDR5T and new high-bandwidth memory products (HBM3E)."
HBM3E is SK Hynix's 5th generation HBM product. SK Hynix plans to prepare HBM3E product samples with 8 Gbps data transfer performance in the second half of this year and mass-produce them next year.
Meanwhile, SK Hynix is undergoing additional certification procedures to apply the 1a DDR5, which has completed Intel compatibility verification, to Intel's next-generation Xeon Scalable Platform.
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