ChipsKey Completes International Trademark Registration for GaN Power Semiconductor 'HighGaN'

ChipsKey, a company specializing in the design of gallium nitride (GaN) power semiconductors, announced on July 1 that it has completed the international trademark registration for its GaN power semiconductor technology through the World Intellectual Property Organization (WIPO).

ChipsKey's registration falls under Class 09 (power semiconductors, power conversion devices, etc.), and the registered name is 'HighGaN'.

'HighGaN' signifies that ChipsKey's GaN-based power semiconductor devices offer high performance and high reliability. Through trademark registration, ChipsKey plans to brand its technology and strengthen its global IP portfolio.

ChipsKey was the first in Korea to mass-produce 650V-class power semiconductors based on GaN-on-Si wafers, which are created by growing a gallium nitride layer on a silicon substrate. The company is expanding product supply to a variety of application fields, including high-speed chargers, AI data centers, and industrial power equipment.

In the GaN power semiconductor market, which has been recording annual growth rates of over 35%, ChipsKey plans to promote the technological reliability and product differentiation of the 'HighGaN' brand to global customers and partners, and to focus on marketing to new clients.

Chulho Kwak, CEO of ChipsKey, stated, "Securing the 'HighGaN' brand is a strategic move that goes beyond simply registering a name. It is aimed at establishing our technological identity and securing leadership in the next-generation market. We will continue to strengthen both our mass production capabilities and our brand value."

Founded in 2017, ChipsKey is a fabless company specializing in the design of GaN electronic devices. The company focuses on high-performance power semiconductors and has secured differentiated technological competitiveness.

GaN is a representative compound semiconductor material that, compared to conventional silicon (Si), offers higher power efficiency, high-speed switching, high-temperature stability, and miniaturization. It is gaining attention as a core material for power infrastructure in electric vehicles, energy storage systems (ESS), and data centers.