Sejong University Semiconductor Systems Engineering Research Team Publishes Paper in Top Materials Science Journal

First Development of Next-Generation 2D Material Formation Technology
"Will Increase the Commercialization Potential of 2D Semiconductors"

Sejong University announced on the 19th that a research team led by Professor Eom Tae-yong from the Department of Semiconductor Systems Engineering published a paper in the journal ACS Nano, which specializes in nanoscience and nanotechnology.

Professor Eom Taeyong of the Department of Semiconductor Systems Engineering at Sejong University, Professor Kang Kibeom of the Department of Materials Science and Engineering at KAIST, and Researcher Park Hyunbin (first author) [Photo by Sejong University]

ACS Nano is known as an internationally renowned journal that introduces world-class research results through high impact and rigorous peer review processes. This research was conducted in collaboration with Professor Kang Ki-beom's team from the Department of Materials Science and Engineering at KAIST.

The research team developed a method to create thin films using a material called 'Bi2Se05,' which has a high dielectric constant. Bi2Se05 exhibits excellent compatibility with two-dimensional semiconductor materials such as graphene and serves as an insulator in next-generation two-dimensional semiconductor transistors. Despite these properties, it had not been formed in the material layers commonly used in the semiconductor industry, posing challenges for further research.

Accordingly, Professor Eom's research team utilized a technology called atomic layer deposition (ALD) to develop thin and uniform Bi2Se05 films. According to the team, this technology is a sophisticated method that deposits atoms one by one to create thin films. In particular, by inducing chemical reactions that form highly reactive intermediates during the deposition process, they were able to form Bi2Se05 films with excellent electrical properties on substrates commonly used in current semiconductor technology.

Professor Eom's team evaluated that their research results opened the possibility of using Bi2Se05 as a high-dielectric constant dielectric in next-generation semiconductor devices. They also noted that this material is highly compatible with existing semiconductor manufacturing technologies, making it an important foundation to enhance the commercialization potential of two-dimensional semiconductors.

Professor Eom stated, "Through this joint research, we have developed a technology that can effectively control chemical reactions during the thin film formation process to create next-generation two-dimensional materials for the first time. Based on this, it will aid in the development of two-dimensional semiconductor transistors and monolithic three-dimensional integrated semiconductors using them."