Held June 6-8 in Santa Clara, USA
Samsung showcases latest SSD and 9th Gen V-NAND
SK presents enterprise SSD and 12-stack HBM3E
Samsung Electronics and SK Hynix participated in the major NAND flash industry event, the 'Flash Memory Summit (FMS) 2024,' showcasing a large number of the latest artificial intelligence (AI) semiconductors.
On the 6th (local time), the booth of Samsung Electronics' latest SSD (Solid State Drive) 'PM1753' for generative artificial intelligence (AI) servers at the memory semiconductor event 'FMS 2024' held at the Santa Clara Convention Center in California, USA. [Image source=Yonhap News]
According to the industry on the 8th, the two companies unveiled solid-state drives (SSD), 3D NAND flash, high-bandwidth memory (HBM), and more at FMS held from the 6th to the 8th (local time) in Santa Clara, California, USA.
Marking its 18th anniversary this year, FMS was the world's largest NAND flash event called 'Flash Memory Summit' until last year, but from this year, it expanded its scope to cover the entire memory and storage fields, including DRAM. Samsung Electronics introduced its latest SSD, the 'PM1753,' at this event. An SSD is a semiconductor equipped with multiple NAND flash memories, which retain stored information even when the power is off. The PM1753 is a server SSD used for generative AI inference and training. It is Samsung Electronics' first server SSD released in three years, with power efficiency and performance improved by up to 1.7 times compared to the PM1743, which was unveiled in December 2021.
Samsung Electronics also showcased the actual '9th generation V-NAND,' a 3D NAND flash memory that it announced mass production of for the first time in the industry in April. The 9th generation V-NAND, used in smartphones and SSDs, is the first product to stack nearly 300 layers in a 'double stack' (2-layer) structure. Jim Elliott, Vice President and Head of Samsung Electronics Device Solutions (DS) Division in the Americas, said in his keynote speech on the 6th, "For AI advancement, growth in memory semiconductors must accompany it," adding, "Samsung Electronics will lead the development of low-power, high-performance products through continuous research and technological leadership."
SK Hynix exhibited more than 39 types of large-capacity, high-performance products related to automobiles, data centers, and AI, including DRAM and NAND. Among them, the latest enterprise SSD 'PS1010' is a package product combining multiple 176-layer 4D NANDs, with read/write speeds improved by up to 150% compared to the PE8110 PCIe Gen4 and power efficiency improved by over 100%. They also unveiled samples of the 5th generation HBM3E 12-layer, which began mass production this quarter, and the 321-layer triple-level cell (TLC) and quad-level cell (QLC) 4D NAND package samples and 321-layer wafers, targeting mass production in the first half of next year.
In particular, SK Hynix demonstrated its partnership with NVIDIA by showcasing the actual product of the HBM3E equipped on NVIDIA's latest AI chip, the top-tier model GB200 of the Blackwell series. Additionally, they introduced the next-generation memory solution 'CMS 2.0,' which adds computing functions to Compute Express Link (CXL) memory, and 'Object-based Computing Storage (OCS),' jointly developed with the Los Alamos National Laboratory in the United States.
Furthermore, the keynote speech on the 6th featured Vice Presidents Kwon Eon-oh and Kim Cheon-seong, who are responsible for HBM and SSD development, under the theme "AI Era, Memory and Storage Solution Leadership and Vision." At the FMS Superwomen Conference held the following day, Oh Hae-soon, SK Hynix's first female research fellow and vice president, delivered the keynote speech, sending a message of encouragement to female technology leaders.
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