[Click eStock] "Costexis, SiC Power Semiconductor Spacer Achievements Gain Momentum"

NH Investment & Securities forecasted on the 5th that Kostechsis will begin to show significant results in spacers for SiC power semiconductors.

Researcher Kang Kyung-geun of NH Investment & Securities explained, "Spacers are located between the DBC substrate and the SiC chip, efficiently blocking heat generated from the chip to prevent chip damage caused by thermal expansion," adding, "The existing spacer market has been monopolized by Japanese companies such as ALMT and FJ Composite."

He continued, "Since 2019, Kostechsis has been promoting the localization development of heat-dissipating spacers for SiC power semiconductors," and added, "They have vertically integrated from high thermal conductivity materials to package products."

Furthermore, "Last month, the spacers for SiC power semiconductors passed the qualification test of ON Semiconductor," and "mass production is expected to start as early as the third quarter of this year," he analyzed. He said, "It is expected to secure about half of the market share for new vehicle models," and "the product profitability is estimated to slightly exceed that of existing RF communication packages." Customers who have supplied prototypes such as STMicroelectronics and Bisteco are also expected to announce positive qualification test results by the end of this year at the earliest.

Researcher Kang explained, "To proactively respond to the rapidly increasing demand for spacers for SiC power semiconductors, Kostechsis is additionally expanding," adding, "They are planning a third expansion following the second expansion." He judged, "With a turnaround to profitability this year, the company will enter a full-fledged growth trajectory," and "considering the full-scale mass production of spacers and the development of new items in the power semiconductor field, there is abundant momentum for stock price growth."