SK Hynix Delivers First Keynote at China NAND Forum... Announces 3D Advanced Process

March 20: Vice President-Level Participation from Shenzhen, China at 'CFMS 2024'

SK Hynix has been confirmed to participate for the first time in the keynote speech at the 'CFMS (China Flash Market Summit 2024)' held in Shenzhen, China, on the 20th of next month. Samsung Electronics will also deliver a keynote speech. Both companies will have vice president-level executives present on advanced processes such as 3D NAND.

According to semiconductor industry sources on the 20th, Hyun Ahn, Vice President of Solution Development at SK Hynix, and Hwa-seok Oh, Vice President of Solution Product Engineering at Samsung Electronics' DS (Device Solutions) division, will deliver keynote speeches at the CFMS in Shenzhen, China, next month. Vice President Ahn is expected to present on 3D NAND technology and hybrid bonding technology for 400-layer NAND. Vice President Oh will also make a technology-related presentation.

The top event related to NAND is the 'FMS (Flash Memory Summit)' held annually in August in Seattle, USA. CFMS, which has been held since 2017, is gaining increasing attention as a major NAND-related summit, though not as large as FMS. This CFMS will be attended by Samsung Electronics, SK Hynix, as well as US companies Micron and Intel, Japan's Kioxia, and China's YMTC.

Although the NAND market has recently been recovering, the semiconductor industry’s policy is to always be prepared for trade risks related to US-China conflicts. Especially for SK Hynix, which has a large business presence in China, managing trade risks is critical. SK Hynix produces about 30% of its total NAND at the Dalian NAND Solidigm (formerly Intel NAND division) factory.

Earlier, during the Q4 earnings conference call last year, it was stated, "The Wuxi fab will ultimately transition to the 1a㎚ (nanometer, one billionth of a meter) process to enable mass production of products such as DDR (Double Data Rate) 5 and LPDDR (Low Power Double Data Rate) 5," and "We are considering extending the factory utilization period as much as possible." The 1a DRAM is a 4th generation 10-nanometer class DRAM and is considered an advanced process among those known so far.