[Chip Talk] "Expanding Sub-10nm DRAM Capacity to 100Gb" Samsung's AI Memory Gambit

Next-Generation 11nm-Class DRAM Development Progressing
3D New Structure Introduced for Sub-10nm DRAM
HBM3 Mass Production Underway, Next-Gen HBM3E Samples Being Supplied

"We will achieve the highest level of integration for DRAM and NAND flash with overwhelming technological prowess." (Lee Jung-bae, President of Samsung Electronics Memory Business)

Lee Jung-bae, who oversees Samsung Electronics' Memory Business Division, is focusing Samsung Electronics' memory semiconductor strategy in the AI (Artificial Intelligence) era on achieving the highest level of DRAM and NAND integration and developing high-performance, high-capacity, and low-power product lines through this. At the 'Samsung Memory Tech Day 2023' held on the 20th (local time) in Silicon Valley, USA, under the theme of 'Redefining the Role of Memory,' President Lee unveiled Samsung Electronics' memory solution strategy. This strategy aligns with his earlier remarks in the Samsung Electronics Semiconductor Newsroom, where he mentioned the need for differentiated memory in the AI era and expressed his determination to enhance integration and develop new memory solutions.

On October 20 (local time), Lee Jung-bae, President of the Memory Business Division, is giving a presentation at the 'Samsung Memory Tech Day 2023' held in Silicon Valley, USA.

Samsung Electronics is strategically focusing on next-generation memory solutions to lead the era of massive AI, as the memory semiconductor market is currently experiencing fluctuations due to a slowdown in IT device demand, but high growth is expected with the advent of the AI era. Market research firm Omdia forecasted that the memory semiconductor market size will decrease from $144 billion in 2022 to $89.5 billion in 2023. However, it is expected to recover and grow again from 2024, reaching $110.2 billion in 2024, $157.8 billion in 2025, $184.5 billion in 2026, and $181.3 billion in 2027. The compound annual growth rate (CAGR) from 2023 to 2027 is projected to be 19.3%.

For Samsung Electronics, which has held the title of the world's number one memory solution company for 30 years since 1993, a strategy for the next 30 years has become crucial. As the main applications of memory expand from PC → mobile → data centers → massive AI, Samsung Electronics believes that demand will increase not only for high-performance, high-capacity, low-power memory that processes vast amounts of data quickly while reducing costs but also for memory with computational functions.

◆Smooth Development of Next-Generation 11nm-Class DRAM and Unveiling of HBM3E DRAM=Samsung Electronics announced at 'Samsung Memory Tech Day 2023' that following the start of mass production of 12nm-class DRAM in May, it is developing next-generation 11nm-class (1nm = one billionth of a meter) DRAM targeting the industry's highest level of integration. It is also preparing for the upcoming era of sub-10nm DRAM. Currently, it is preparing to introduce a new 3D stacking structure in sub-10nm DRAM, with plans to expand capacity to over 100Gb (gigabits) on a single chip.

Separately, Samsung is developing the highest number of layers achievable with a Double Stack structure in 9th-generation V-NAND. Double Stack refers to a method of drilling holes for electrical connections in stacked storage space in two stages. The operational chips for mass production early next year have already been successfully secured. By reducing the cell's planar area and height to decrease volume and increasing the number of layers, this core technology is preparing for the era of 1000-layer V-NAND.

At 'Samsung Memory Tech Day 2023,' Samsung Electronics also unveiled the next-generation HBM3E DRAM (Samsung's 5th-generation HBM DRAM product) 'Shinebolt,' which has emerged as a core semiconductor essential in the AI era. Samsung pioneered the HBM market by commercializing HBM2 for high-performance computing (HPC) in 2016, which laid the foundation for today's AI-oriented HBM market. Currently, Samsung is mass-producing HBM3 8-layer and 12-layer products and has succeeded in developing the next-generation HBM3E.

The newly unveiled 'Shinebolt' offers high performance of up to 9.8Gbps per data input/output pin. This speed can process over 1.2TB of data per second (equivalent to processing 40 UHD movies of 30GB capacity in one second). By optimizing NCF (Non-Conductive Film) technology, it fills the gaps between chips to achieve high-density stacking and maximizes thermal conductivity to improve thermal characteristics. Samsung Electronics stated that it is currently delivering HBM3E samples to customers and plans to provide customized turnkey services combining cutting-edge packaging technology and foundry.

At the event, Samsung Electronics also introduced ▲the industry's largest capacity '32Gb DDR5 DRAM,' ▲the industry's first '32Gbps GDDR7 DRAM,' and ▲'PBSSD,' which dramatically increases storage capacity to handle vast data with minimal servers. Additionally, it unveiled the industry's first developed '7.5Gbps LPDDR5X CAMM2,' which could change the landscape of the next-generation PC and laptop DRAM market. These are new weapons that can expand applications not only in the PC market but also in data centers.

Furthermore, Samsung introduced the detachable automotive solid-state drive (SSD) 'Detachable AutoSSD.' This product supports a maximum continuous read speed of 6500MB/s and offers a capacity of 4TB. It is implemented in a detachable form factor, allowing easy SSD replacement, which facilitates performance upgrades and other advantages.