'Samsung Tech Day' to be Held in October... Anticipation for Next-Generation Memory Strategy

Samsung Electronics to Hold Memory Event in the US in October
Professor Chris Miller, Author of 'Chip War,' to Attend

Samsung Electronics will showcase its latest memory technology in the United States this October. Industry attention is focused on whether the company will introduce its next-generation DRAM and NAND flash business strategies to lead the artificial intelligence (AI) era.

Samsung Electronics will hold the 'Samsung Memory Tech Day 2023' on October 20 at the San Jose McEnery Convention Center in California, USA. Samsung Tech Day is an annual event held since 2017 to introduce Samsung Electronics' next-generation semiconductors.

This year, Samsung Electronics will divide the Tech Day into two themes: system semiconductors (System LSI Division) and memory semiconductors (Memory Division). Prior to the memory event, the system event 'Samsung System LSI Tech Day 2023' will be held on the 5th.

Lee Jung-bae, President of Samsung Electronics Memory Division, presenting at Samsung Tech Day last year / Photo by Samsung Electronics

At the memory event, a welcome speech will be given by Han Jin-man, Vice President and Head of Samsung Electronics DS Division Americas (DSA), followed by keynote speeches from Lee Jung-bae, President of Samsung Electronics Memory Division, and Bae Yong-chul, Vice President of the Memory Division. The main topics will be business strategies for technological innovation and ecosystem creation.

Chris Miller, a professor at Tufts University and author of the famous semiconductor book 'Chip War,' will also attend the Tech Day. Professor Miller will have a discussion with Jim Elliott, Vice President of Samsung Semiconductor Sales and Marketing, on the theme of 'Semiconductors in the U.S. in 2023.'

The semiconductor industry is paying close attention to whether Samsung Electronics will unveil its latest memory technologies and products at this event. At last year's event, Samsung revealed a product roadmap announcing the launch of 5th generation 10nm-class (12nm-class) DRAM and 8th/9th generation V-NAND. Subsequently, in November last year, Samsung announced the mass production of 8th generation V-NAND, and in May this year, the mass production of 12nm-class DDR5 DRAM.

The industry is hopeful for the latest updates, especially since Samsung announced last year that it would mass-produce 9th generation V-NAND in 2024 and develop 1000-layer V-NAND by 2030. There is also keen interest in whether discussions will include high-value-added DRAM such as high-bandwidth memory (HBM), which is gaining attention amid rising AI demand.

At last year’s event, President Lee stated, "Samsung Electronics has produced a total memory storage capacity exceeding 1 trillion gigabytes (GB) over approximately 40 years, with half of that created in the past three years, reflecting the rapid digital transformation," and added, "going forward, we will evolve through co-evolution with new platforms by providing high-bandwidth, high-capacity, and high-efficiency memory."