Background of SK Hynix's Development of the Fastest Mobile DRAM 'LPDDRT'

Introducing the Key Figures Behind LPDDRT Development in the Newsroom

[Asia Economy Reporter Kim Pyeonghwa] SK Hynix has revealed the background behind the development of its new high-efficiency mobile DRAM product 'LPDDRT,' which boasts a speed advantage. They shared behind-the-scenes stories, stating that the product was made possible by adopting next-generation processes and overcoming technical challenges.

On the 8th, SK Hynix introduced the key developers of LPDDRT on its newsroom. The team includes Kim Hyunseung, SK Hynix Design Quality Innovation TL; Kim Giryong, Mobile PE1 TL; Jeong Seunghyun, DRAM Product Planning TL; Song Kyunggeun, DRAM PMO TL; and Jo Seonki, Interface TL.

From the left, Kim Hyunseung TL, Kim Giryong TL, Jeong Seunghyun TL, Song Kyunggeun TL, and Jo Seongi TL are taking photos during the interview. /

Earlier, SK Hynix unveiled the new high-efficiency mobile DRAM product 'LPDDRT' in January. LPDDRT boasts the highest speed among existing mobile DRAMs. Its operating speed is 9.6 gigabits per second (Gbps), 13% faster than the existing 7th generation LPDDR product (LPDDR5X).

SK Hynix released LPDDRX in November last year and launched the new product just two months later. By diversifying the design options of LPDDRX and enhancing speed and stability, they were able to introduce LPDDRT. The next-generation HKMG (High-K Metal Gate) process applied since LPDDRX was helpful in this process.

Song Kyunggeun TL, who led the development of LPDDR5T, said, “If we had been satisfied with the development of LPDDR5X and done nothing else, LPDDR5T would not exist in the world. This product highlights the challenging spirit of the team members who wanted to bring a more advanced product to the market.”

SK Hynix faced difficulties in physical verification during the LPDDRT development process. There was no test equipment to verify the speed. It was also difficult to accurately confirm due to speed limitations in the system. Jo Seonki TL explained that to solve this, “We identified each factor affecting speed characteristics one by one” and “set speed targets for each factor, managed, and measured them.”

SK Hynix plans to mass-produce LPDDRT in the second half of the year by adopting the 10-nanometer 4th generation (1a) fine process. Kim Giryong TL said, “LPDDR5T has now succeeded in development, but many more steps are needed to mass-produce the product,” adding, "We will not stop challenging ourselves to achieve the successful launch of LPDDR5T and create both first and best value together.

SK Hynix expects the application range of LPDDRT to expand to fields such as artificial intelligence (AI), machine learning, and augmented/virtual reality (AR/VR). Accordingly, they plan to supply new products with various capacities and expand their influence in the mobile DRAM market. Recently, they combined LPDDR5T single chips to create a 16-gigabyte (GB) capacity package product and provided samples to customers.