SK Hynix Develops World's Fastest 'Server' DRAM 'MCR DIMM' Sample for the First Time Worldwide

Achieving the Highest Current Speed of Over 8Gbps (8 Gigabits per Second)
Intel Collaborates with Renesas... Leading the Development of Innovative Products

[Asia Economy Reporter Moon Chaeseok] SK Hynix has introduced the world's first sample of the fastest product in the high-value-added 'server-grade' DRAM sector.

On the 8th, SK Hynix announced that it successfully developed the world's first 'DDR5 MCR DIMM.' Its operating speed exceeds 8Gb (gigabits) per second, which is over 80% faster than the 4.8Gb per second speed of server-grade DDR5. DDR is a DRAM standard mainly used in servers and PCs. Development has progressed up to the 5th generation, DDR5.

MCR DIMM is a module product where multiple DRAM chips are combined on a substrate. The product increases speed by enabling two ranks?the basic data processing operation units of the module?to operate simultaneously. A rank refers to a bundle of 64 bytes of data and represents the basic data transfer unit sent from the DRAM module to the CPU.

According to SK Hynix, in a typical DRAM module, 64 bytes of data are transferred to the CPU at a time from one rank. In MCR DIMM, 128 bytes are sent at once. By increasing the amount of data transferred per cycle from the module to the CPU, it achieves speeds over 8Gbps, approximately twice as fast as a single DRAM chip.

SK Hynix's engineering team utilized a data buffer embedded in the MCR DIMM. This is the key to enabling two ranks to operate simultaneously. The buffer is an essential component for server-grade DRAM, which requires high performance and stability. It is mounted on the DRAM module and optimizes signal transmission performance between the DRAM and the CPU. The data buffer relays multiple signals sent from the module and the server CPU receives and processes signals passing through the data buffer.

Until now, it was commonly believed that DDR5 speed was limited by the operating speed of individual DRAM chips. SK Hynix developed the technology to increase speed through the module rather than the individual DRAM chip.

SK Hynix emphasized that collaboration with Intel in the United States and Renesas in Japan was crucial to the success of the product development. The three companies worked closely together until the product's speed and performance were verified.

Ryu Seongsu, Vice President of DRAM Product Planning at SK Hynix, said, "The fusion of our module design capabilities with Intel's server CPU and Renesas's buffer technology enabled the product development," adding, "For MCR DIMM to deliver stable performance, the interaction between the data buffer operating inside and outside the module and the server CPU is very important."

Vice President Ryu stated, "Through the development of the world's fastest MCR DIMM, SK Hynix has once again achieved a technological evolution in DDR5," and emphasized, "We will continue to strive to 'break technological limits' and solidify our top competitiveness in the server DRAM market."

Dimitrios Giakas, Vice President of Intel's Memory IO Technology Division, said, "Intel has led the development of ultra-high-speed products optimized for Intel's next-generation server CPUs in collaboration with SK Hynix," and added, "The two companies will continue to work closely on the standardization of MCR DIMM and the development of follow-up products."

Samir Kupahali, Vice President of Renesas's Memory Interface Division, said, "The data buffer developed by Renesas this time is the result of three years of concentrated efforts combining various technologies from product conception to completion," and expressed pride in collaborating with SK Hynix and Intel to develop an innovative product.

SK Hynix stated, "We expect demand for MCR DIMM to increase significantly in the high-performance computing market," and hinted, "The company plans to mass-produce this product in line with the full-scale customer demand."