[Special Stock] RF Materials Rises on Success in Domestic Production of Next-Generation 'GaN Technology' Eyeing Samsung's Interest

[Asia Economy Reporter Jang Hyowon] RF Materials is showing strong performance following news that domestic researchers have succeeded in domesticating the core semiconductor component 'Gallium Nitride (GaN) power device.'

As of 10:54 AM on the 29th, RF Materials is trading at 10,900 KRW, up 9.77% compared to the previous trading day.

According to media reports on the 28th, the Electronics and Telecommunications Research Institute of Korea succeeded in domesticating the 'Gallium Nitride power device,' a core semiconductor component subject to Japan's export regulations.

This Gallium Nitride power device has an output power of 300W and a power density of over 10W/mm, which is superior to the existing power density of 8.4W/mm.

Compound semiconductors such as GaN have a wide bandgap (the energy gap between energy levels) and high-temperature stability. Compared to single-element semiconductors like Si semiconductors, they consume 75% less power. Also, GaN's performance is higher than that of SiC semiconductors, which evolved from silicon semiconductors.

In May, RF Materials was selected for the 'Domestic Production Project for Industrial High-Power Laser Diode Chips and Module Manufacturing Technology' conducted by the Ministry of Trade, Industry and Energy. In this project, RF Materials serves as the general project manager, and Optowell, the Electronics and Telecommunications Research Institute of Korea, and the Korea Photonics Technology Institute participate in developing GaN and Gallium Arsenide (GaAs) epi-materials and laser diode chips using them.

According to market research firm Yole D?veloppement, the GaN power semiconductor market is expected to grow from $46 million (approximately 51.5 billion KRW) in 2020 at an annual growth rate of 70%, reaching $1.1 billion (approximately 1.2315 trillion KRW) by 2026. Swiss STMicroelectronics, which supplies SiC semiconductors for Tesla electric vehicle Model 3, is known to be actively investing in GaN.