World's First 3nm Mass Production... First Application of Next-Generation GAA Technology [Samsung 3nm First Mass Production]

Power Consumption Reduced by 45%, Performance Increased by 23%, and Area Reduced by 16% Compared to 5nm

The key figures from the Foundry Business Division, Semiconductor Research Institute, and Global Manufacturing & Infrastructure Headquarters, who participated in the mass production of the 3-nanometer foundry, are celebrating the 3-nanometer foundry mass production by holding up three fingers.

[Asia Economy Reporter Park Sun-mi] Samsung Electronics has officially announced the world's first mass production of 3nm (nanometer, one billionth of a meter) semiconductors. This is faster than TSMC, the world's number one foundry (semiconductor contract manufacturing) market leader, making Samsung the first to produce and supply products with 3nm process-applied semiconductors. This 3nm process is regarded as Samsung's 'new weapon' to catch up with TSMC and fend off Intel's pursuit.

On the 30th, Samsung Electronics announced that it has started initial mass production based on the 3nm foundry process applying Gate-All-Around (GAA) technology, the world's first. The 3nm process is the most advanced technology among semiconductor manufacturing processes.

In particular, Samsung Electronics has applied the next-generation GAA technology for the first time in the world, where the gate surrounds all four sides of the channel through which current flows in the transistor that constitutes the semiconductor. Samsung Electronics is currently the only company worldwide offering 3nm process foundry services applying the new GAA transistor structure technology.

Samsung Electronics' 3nm GAA first-generation process reduces power consumption by 45% and improves performance by 23% compared to the existing 5nm FinFET process. The area is reduced by 16%. The upcoming GAA second-generation process is expected to reduce power consumption by 50%, improve performance by 30%, and reduce area by 35%, allowing semiconductors to incorporate more functions and higher performance.

Samsung Electronics stated that after initially producing high-performance computing (HPC) system semiconductors using the 3nm process, it plans to expand to mobile system-on-chip (SoC) and other applications.

Meanwhile, Samsung Electronics did not disclose the yield when officially announcing the 3nm semiconductor mass production. Generally, the semiconductor industry considers a yield of about 80-90% necessary for stable mass production and securing customers. It is reported that Samsung has not yet achieved this level of yield in the 3nm process. However, Samsung has reached an agreement with customers to start mass production at the current yield level and plans to rapidly improve the yield alongside mass production in the future.

Choi Si-young, President of Samsung Electronics' Foundry Business Division, said, "Samsung Electronics, which has rapidly grown by proactively introducing new technologies such as 'High-K Metal Gate,' FinFET, and Extreme Ultraviolet (EUV) lithography as the first in the foundry industry, is now providing the world's first foundry service with the 3nm process applying GAA technology." He added, "We will continue to actively develop differentiated technologies and establish a system to quickly enhance process maturity."