[Asia Economy Reporter Jang Hyowon] Trinotechnology, a subsidiary of IA, a specialized company in automotive semiconductors and modules, has succeeded in attracting external investment worth 10 billion KRW, expanding its power semiconductor development.
On the 10th, Trinotechnology announced that it issued a total of 10 billion KRW worth of private redeemable convertible preferred shares (RCPS) and bonds with warrants (BW) to domestic institutional investors. The investors include Suseong Asset Management, Songhyun Investment, and Bridgepole Investment.
Trinotechnology plans to use the funds to expand facilities significantly to increase next-generation power semiconductor R&D and production capacity in response to the ongoing semiconductor shortage in the market, with a particular focus on investing in SiC MOSFET development.
Notably, this issuance is a form of pre-IPO equity investment, and preparations for listing on KOSDAQ are progressing smoothly.
A Trinotechnology official stated, “We successfully attracted funds from leading domestic institutional investors who highly evaluated the growth potential of the power semiconductor market and Trinotechnology’s technological competitiveness,” adding, “We will achieve results such as commercialization of automotive power semiconductors and new product development to further grow future sales and profits.”
They continued, “Amid the rapidly increasing demand for power semiconductors, we have verified the quality and price competitiveness of our products, leading to a significant increase in orders from Chinese and domestic customers,” and “While delivering good results in technology and performance, we will also proceed with the ongoing KOSDAQ listing preparations without any setbacks.”
Trinotechnology, established in 2008, is a specialized power semiconductor company. It focuses on developing and producing power semiconductor devices such as MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), IGBT (Insulated Gate Bipolar Transistor), and DIODE. It possesses domestic technology for silicon carbide (SiC) power semiconductors, which can reduce energy loss by up to 90% compared to conventional silicon (Si)-based power semiconductors.
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