Sungkyunkwan University Professor Song Seungwook's Team Innovates Next-Generation Memory Performance

Information Storage Efficiency Increased Fivefold
A New Milestone for AI Semiconductors

Sungkyunkwan University announced on the 21st that Professor Seungwook Song's research team from the Department of Energy Science has developed a technology that improves the information storage efficiency of next-generation ferroelectric non-volatile memory by five times. This research is expected to present a new turning point in ultra-low power high-performance computing, AI semiconductors, and next-generation memory device development.

Professor Song Seung-wook

Recently, the semiconductor industry has seen a growing need for non-volatile memory devices with high power efficiency. In particular, ferroelectric memory based on two-dimensional (2D) semiconductor materials has attracted attention as next-generation semiconductor technology, but there has been a problem where information storage efficiency easily degrades due to defects on the material surface.

The research team succeeded in smoothly improving charge transfer on the semiconductor surface by applying new ferroelectric gating materials and electrode materials. Through this, they designed the device to operate at low power, increasing information storage efficiency by five times compared to existing devices, and dramatically enhancing current density and mobility.

This research was conducted jointly with the research teams of Professor Juhun Kang from the University of Pennsylvania, Pennsylvania State University, and Sungkyunkwan University (currently Yonsei University), and was published in the world-renowned journal ACS Nano.

Professor Seungwook Song explained, “This research proposed a new method to overcome the performance limits of 2D semiconductor-based ferroelectric transistors,” adding, “In particular, by securing low contact resistance and high carrier density, it expanded the potential as a next-generation low-power electronic device.”