Suspected of Receiving Hundreds of Millions in Bribes for Leaking 18nm DRAM Semiconductor Process Information
A former employee of Samsung Electronics and its partner company, who leaked core semiconductor technology to a Chinese company and pocketed hundreds of billions of won, has been arrested and indicted.
On the 3rd, the Information Technology Crime Investigation Division of the Seoul Central District Prosecutors' Office (Chief Prosecutor Lee Chun) arrested and indicted former Samsung Electronics manager Kim and former manager Bang of partner company A for violating the Industrial Technology Protection Act and other charges.
According to the prosecution, Kim is accused of leaking Samsung Electronics' 18-nanometer DRAM semiconductor process information, a national core technology, to the Chinese company Changxin Memory Technologies (CXMT).
The prosecution believes that when Kim moved to the startup CXMT in 2016, he leaked materials related to semiconductor 'deposition' and technical data on seven core processes, receiving hundreds of billions of won in bribes. CXMT is a major DRAM semiconductor company in China.
Bang is accused of conspiring with Kim to unlawfully leak design technical data of company A, which supplies semiconductor equipment, to CXMT. Both were arrested on the 15th of last month.
The prosecution plans to continue additional investigations into those involved in technology leakage crimes, including personnel from subcontractors.
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